Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
We propose a model describing the operations of hafnium oxide-based resistive random access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport are self-consistently described starting from the leakage current in pristine HfO 2 . Material structural modifications occurri...
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| Veröffentlicht in: | IEEE transactions on electron devices 2015-06, Vol.62 (6), p.1998-2006 |
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| Hauptverfasser: | , , , , |
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| container_end_page | 2006 |
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| container_issue | 6 |
| container_start_page | 1998 |
| container_title | IEEE transactions on electron devices |
| container_volume | 62 |
| creator | Padovani, Andrea Larcher, Luca Pirrotta, Onofrio Vandelli, Luca Bersuker, Gennadi |
| description | We propose a model describing the operations of hafnium oxide-based resistive random access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport are self-consistently described starting from the leakage current in pristine HfO 2 . Material structural modifications occurring during the RRAM operations, such as conductive filament (CF) creation and disruption, are accounted for. The model describes the complex processes leading to a formation of the CF and its dependence on both electrical conditions (e.g., current compliance, voltage stress, and temperature) and device characteristics (e.g., electrodes material and dielectric thickness). |
| doi_str_mv | 10.1109/TED.2015.2418114 |
| format | Article |
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Charge carrier and ion transport are self-consistently described starting from the leakage current in pristine HfO 2 . Material structural modifications occurring during the RRAM operations, such as conductive filament (CF) creation and disruption, are accounted for. 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The model describes the complex processes leading to a formation of the CF and its dependence on both electrical conditions (e.g., current compliance, voltage stress, and temperature) and device characteristics (e.g., electrodes material and dielectric thickness).</description><subject>Conductive filament (CF)</subject><subject>Dielectrics</subject><subject>forming</subject><subject>Hafnium compounds</subject><subject>HfO</subject><subject>Ions</subject><subject>Microscopy</subject><subject>RESET</subject><subject>resistive random access memory (RRAM)</subject><subject>resistive switching</subject><subject>SET</subject><subject>Switches</subject><subject>Temperature</subject><subject>Temperature measurement</subject><subject>trap-assisted tunneling (TAT)</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF1LwzAUhoMoOKf3gjf5A505-a53Y66bsFKY87p0aaKRbRlJQf33a9nw6vDA-74cHoQegUwASP68mb9OKAExoRw0AL9CIxBCZbnk8hqNCAGd5UyzW3SX0nePknM6QovSmxiSCUdvcBlau_OHTxwcXrrqF6_X0xJXRxubzodDesFFDHtchLgfUl3A7z--M1893KMb1-ySfbjcMfoo5pvZMltVi7fZdJUZrliXWcddo5wDYyxvwRKWS2u0a63TLm8pJ0Jo2QNrVEuFVo6LZruVFKjKqWrZGJHz7vB1itbVx-j3TfyrgdSDiLoXUQ8i6ouIvvJ0rnhr7X9cES0J0ewEMt9ZoA</recordid><startdate>20150601</startdate><enddate>20150601</enddate><creator>Padovani, Andrea</creator><creator>Larcher, Luca</creator><creator>Pirrotta, Onofrio</creator><creator>Vandelli, Luca</creator><creator>Bersuker, Gennadi</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20150601</creationdate><title>Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching</title><author>Padovani, Andrea ; Larcher, Luca ; Pirrotta, Onofrio ; Vandelli, Luca ; Bersuker, Gennadi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c473t-ef4fa7ff1cce4d1e0396ec8fdef8f9d2405586ef83a7d2587f45abb62127927d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Conductive filament (CF)</topic><topic>Dielectrics</topic><topic>forming</topic><topic>Hafnium compounds</topic><topic>HfO</topic><topic>Ions</topic><topic>Microscopy</topic><topic>RESET</topic><topic>resistive random access memory (RRAM)</topic><topic>resistive switching</topic><topic>SET</topic><topic>Switches</topic><topic>Temperature</topic><topic>Temperature measurement</topic><topic>trap-assisted tunneling (TAT)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Padovani, Andrea</creatorcontrib><creatorcontrib>Larcher, Luca</creatorcontrib><creatorcontrib>Pirrotta, Onofrio</creatorcontrib><creatorcontrib>Vandelli, Luca</creatorcontrib><creatorcontrib>Bersuker, Gennadi</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) Online</collection><collection>IEEE Xplore (Online service)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Padovani, Andrea</au><au>Larcher, Luca</au><au>Pirrotta, Onofrio</au><au>Vandelli, Luca</au><au>Bersuker, Gennadi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2015-06-01</date><risdate>2015</risdate><volume>62</volume><issue>6</issue><spage>1998</spage><epage>2006</epage><pages>1998-2006</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We propose a model describing the operations of hafnium oxide-based resistive random access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport are self-consistently described starting from the leakage current in pristine HfO 2 . Material structural modifications occurring during the RRAM operations, such as conductive filament (CF) creation and disruption, are accounted for. The model describes the complex processes leading to a formation of the CF and its dependence on both electrical conditions (e.g., current compliance, voltage stress, and temperature) and device characteristics (e.g., electrodes material and dielectric thickness).</abstract><pub>IEEE</pub><doi>10.1109/TED.2015.2418114</doi><tpages>9</tpages></addata></record> |
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| source | IEEE Xplore (Online service) |
| subjects | Conductive filament (CF) Dielectrics forming Hafnium compounds HfO Ions Microscopy RESET resistive random access memory (RRAM) resistive switching SET Switches Temperature Temperature measurement trap-assisted tunneling (TAT) |
| title | Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching |
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