Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
We propose a model describing the operations of hafnium oxide-based resistive random access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport are self-consistently described starting from the leakage current in pristine HfO 2 . Material structural modifications occurri...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on electron devices 2015-06, Vol.62 (6), p.1998-2006 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We propose a model describing the operations of hafnium oxide-based resistive random access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport are self-consistently described starting from the leakage current in pristine HfO 2 . Material structural modifications occurring during the RRAM operations, such as conductive filament (CF) creation and disruption, are accounted for. The model describes the complex processes leading to a formation of the CF and its dependence on both electrical conditions (e.g., current compliance, voltage stress, and temperature) and device characteristics (e.g., electrodes material and dielectric thickness). |
---|---|
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2015.2418114 |