Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

A novel electrostatic discharge protection device gate-grounded nMOS (GGnMOS) incorporated silicon-controlled rectifier (GGISCR) is proposed in this paper. With a distinguished feature of an imbedded floating P+ region, the GGISCR is demonstrated to be superior to the conventional low voltage trigge...

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Veröffentlicht in:	IEEE transactions on electron devices 2015-02, Vol.62 (2), p.606-614
Hauptverfasser:	Jie Zeng, Shurong Dong, Liou, Juin J., Yan Han, Lei Zhong, Weihuai Wang
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrostatic discharges Impact ionization P-n junctions Resistance Robustness Thyristors
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