SiC Power Device Die Attach for Extreme Environments

Silicon carbide power diodes and transistors are enabling technology for power electronics capable of operating in extreme environments. In this paper, a AgBiX solder paste has been studied for SiC power device die attach to power substrates for 200 °C use in vehicle and downhole well logging applic...

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Veröffentlicht in:IEEE transactions on electron devices 2015-02, Vol.62 (2), p.346-353
Hauptverfasser: Zhenzhen Shen, Johnson, R. Wayne, Hamilton, Michael C.
Format: Artikel
Sprache:eng
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Zusammenfassung:Silicon carbide power diodes and transistors are enabling technology for power electronics capable of operating in extreme environments. In this paper, a AgBiX solder paste has been studied for SiC power device die attach to power substrates for 200 °C use in vehicle and downhole well logging applications. The solder paste has a controlled amount of Sn, which limits the amount of Sn intermetallic formation. This produces a stable solder joint as a function of time at high temperature. The die shear strength remained at ~38 MPa through 2000 h of storage at 200 °C. After 1000 thermal cycles from -55°C to 195 °C, the percent die attach area reduction due to solder cracking was
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2358206