SiC Power Device Die Attach for Extreme Environments
Silicon carbide power diodes and transistors are enabling technology for power electronics capable of operating in extreme environments. In this paper, a AgBiX solder paste has been studied for SiC power device die attach to power substrates for 200 °C use in vehicle and downhole well logging applic...
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Veröffentlicht in: | IEEE transactions on electron devices 2015-02, Vol.62 (2), p.346-353 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Silicon carbide power diodes and transistors are enabling technology for power electronics capable of operating in extreme environments. In this paper, a AgBiX solder paste has been studied for SiC power device die attach to power substrates for 200 °C use in vehicle and downhole well logging applications. The solder paste has a controlled amount of Sn, which limits the amount of Sn intermetallic formation. This produces a stable solder joint as a function of time at high temperature. The die shear strength remained at ~38 MPa through 2000 h of storage at 200 °C. After 1000 thermal cycles from -55°C to 195 °C, the percent die attach area reduction due to solder cracking was |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2014.2358206 |