Over 450-GHz ft and fmax InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO2 Sidewall Spacers

Over 450-GHz ft and fmax InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO2 Sidewall Spacers

This paper describes InP/InGaAs double heterojunction bipolar transistor (HBT) technology that uses SiN/SiO 2 sidewall spacers. This technology enables the formation of ledge passivation and narrow base metals by i-line lithography. With this process, HBTs with various emitter sizes and emitter-base...

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Veröffentlicht in:IEEE transactions on electron devices 2014-10, Vol.61 (10), p.3423-3428
Hauptverfasser: Kashio, Norihide, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki
Format: Artikel
Sprache:eng
Schlagworte:
Current gain
Double heterojunction bipolar transistors
Indium gallium arsenide
Indium phosphide
InP heterojunction bipolar transistor (HBT)
ledge passivation
Metals
Passivation
reliability
Silicon compounds
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Zusammenfassung:This paper describes InP/InGaAs double heterojunction bipolar transistor (HBT) technology that uses SiN/SiO 2 sidewall spacers. This technology enables the formation of ledge passivation and narrow base metals by i-line lithography. With this process, HBTs with various emitter sizes and emitter-base (EB) spacings can be fabricated on the same wafer. The impact of the emitter size and EB spacing on the current gain and high-frequency characteristics is investigated. The reduction of the current gain is
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2349872