Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO 2 Gate Dielectric

Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO 2 Gate Dielectric

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Veröffentlicht in:IEEE transactions on electron devices 2014-07, Vol.61 (7), p.2398-2403
Hauptverfasser: Tang, Wing Man, Aboudi, Uraib, Provine, J., Howe, Roger T., Wong, Hon-Sum Philip
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container_issue 7
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container_title IEEE transactions on electron devices
container_volume 61
creator Tang, Wing Man
Aboudi, Uraib
Provine, J.
Howe, Roger T.
Wong, Hon-Sum Philip
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doi_str_mv 10.1109/TED.2014.2325042
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title Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO 2 Gate Dielectric
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