RF-Noise Modeling in Advanced CMOS Technologies

RF circuit design in deep-submicrometer CMOS technologies relies heavily on accurate modeling of thermal noise. Based on Nyquist's law, predictive modeling of thermal noise in MOSFETs was possible for a long time, provided that parasitic resistances and short-channel effects were properly accou...

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Veröffentlicht in:	IEEE transactions on electron devices 2014-02, Vol.61 (2), p.245-254
Hauptverfasser:	Smit, Geert D. J., Scholten, Andries J., Pijper, Ralf M. T., Tiemeijer, Luuk F., van der Toorn, Ramses, Klaassen, Dirk B. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS Compact model excess noise Logic gates Mathematical model Microscopy Noise noise figure PSP model Resistance RF CMOS RF noise Semiconductor device modeling Thermal noise
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