Impact of Transistor Architecture (Bulk Planar, Trigate on Bulk, Ultrathin-Body Planar SOI) and Material (Silicon or III-V Semiconductor) on Variation for Logic and SRAM Applications

The need to enhance transistor performance below 22-nm node has brought in a change in transistor architecture from planar bulk to either ultrathin-body SOI (UTB SOI) or 3-D trigate transistors. Further improvement in transistor performance at sub-7-nm node is likely to require replacement of silicon channel with high-mobility compound semiconductor (III-V) materials. This paper presents a numerical 3-D simulation study of process variation and sidewall roughness/surface roughness effects on 3-D trigate (tapered and rectangular cross sections) on bulk and UTB SOI devices. We also investigate the effects of variation on future III-V trigate transistors using the same 3-D TCAD scheme. The results show that the threshold voltage variation value, ΔV T , in rectangular Si trigate and UTB SOI due to all the variation sources are 13.1 and 24.6 mV, respectively. Moreover, between Si and III-V compound semiconductors, the In 0.53 Ga 0.47 As trigate shows 1.5 times lower total ΔV T value making it a promising candidate for Si replacement. A Monte Carlo study of 6T SRAM cell with fin width or body thickness variation show that the 3σ value of read static noise margin [3σ (RSNM)] is least in SRAMs with rectangular Si trigate. This paper also shows that a 6T SRAM cell at different V CC shows that a Si trigate has V CCmin below 0.4 V.