Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model

A comprehensive study of the impact of the Schottky barrier height, affecting the ambipolar behavior of Schottky barrier double-gate MOSFETs using an analytical model and Synopsys TCAD Sentaurus, is presented. The performance is analyzed with respect to the most important physical parameters and their impact on the device figure-of-merit. Ambipolar behavior is an important factor and must be carefully considered in the device design. This brief shows that the Schottky barrier height plays a very important role and determines the bottleneck on the device performance.