A Self-Consistent Compact Model of Ballistic Nanowire MOSFET With Rectangular Cross Section

We propose a compact model of ballistic gate-all-around metal-oxide-semiconductor field-effect transistors. In this model, the potential distribution in the wire cross section is approximated by a quadratic function. This model potential has one unknown parameter, which determines the shape of the p...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-02, Vol.60 (2), p.856-862
Hauptverfasser:	Numata, T., Uno, S., Hattori, J., Mil'nikov, G., Kamakura, Y., Mori, N., Nakazato, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Ballistic transport compact model Cross-disciplinary physics: materials science rheology Electric potential Electronics Energy states Equations Exact sciences and technology gate-all-around metal-oxide-semiconductor field-effect transistors (GAA-MOSFETs) Logic gates Materials science Mathematical model Nanoscale materials and structures: fabrication and characterization perturbation theory Physics Quantum wires Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Wires
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