A Self-Consistent Compact Model of Ballistic Nanowire MOSFET With Rectangular Cross Section

We propose a compact model of ballistic gate-all-around metal-oxide-semiconductor field-effect transistors. In this model, the potential distribution in the wire cross section is approximated by a quadratic function. This model potential has one unknown parameter, which determines the shape of the potential. The Schrödinger equation in the wire cross section can be approximately solved using the model potential, and the electron energy levels are derived analytically. The unknown parameter is determined by numerically solving a coupled equation for charge densities derived from electrostatics and quantum statistics. We calculate the device properties using the obtained unknown parameter. A Schrödinger-Poisson solver that simulates electron states in the wire cross section is used. The results obtained using it reveal that our model exhibits good agreement for both the lowest and excited energy levels. We estimate the ballistic current using the calculated energy levels and the Landauer formula, which shows good agreement with results simulated using the nonequilibrium Green's function formalism.