Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Low-Doped Double-Gate MOSFET

In this brief, we propose simple and analytical models for threshold voltage and subthreshold slope including short-channel and quantum effects for fully depleted or undoped double-gate MOS devices.

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Veröffentlicht in:	IEEE transactions on electron devices 2012-09, Vol.59 (9), p.2534-2538
Hauptverfasser:	Lacord, Joris, Huguenin, Jean-Luc, Skotnicki, Thomas, Ghibaudo, Gérard, Boeuf, Frédéric
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Compound structure devices Doping Double-gate device drain-induced barrier lowering (DIBL) Electric potential Electron devices Electronics Exact sciences and technology Logic gates Numerical models Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling short-channel effects (SCEs) subthreshold slope Threshold voltage Transistors
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Beschreibung
Zusammenfassung:	In this brief, we propose simple and analytical models for threshold voltage and subthreshold slope including short-channel and quantum effects for fully depleted or undoped double-gate MOS devices.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2012.2201942