Influence of Surface Recombination on Forward Current-Voltage Characteristics of Mesa GaN \hbox^\hbox Diodes Formed on GaN Free-Standing Substrates

Influence of Surface Recombination on Forward Current-Voltage Characteristics of Mesa GaN \hbox^\hbox Diodes Formed on GaN Free-Standing Substrates

The influence of surface recombination on forward current-voltage (I F -V F ) characteristics of gallium nitride (GaN) p + n diodes formed on GaN free-standing substrates was both experimentally and computationally investigated. In the temperature range of 373-273 K, the surface-recombination veloci...

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Veröffentlicht in:IEEE transactions on electron devices 2012-04, Vol.59 (4), p.1091-1098
Hauptverfasser: Mochizuki, K., Nomoto, K., Hatakeyama, Y., Katayose, H., Mishima, T., Kaneda, N., Tsuchiya, T., Terano, A., Ishigaki, T., Tsuchiya, R., Nakamura, T.
Format: Artikel
Sprache:eng
Schlagworte:
Current measurement
Gallium compounds
Gallium nitride
Photonics
power semiconductor devices
Recycling
Schottky diodes
simulation
Surface treatment
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Zusammenfassung:The influence of surface recombination on forward current-voltage (I F -V F ) characteristics of gallium nitride (GaN) p + n diodes formed on GaN free-standing substrates was both experimentally and computationally investigated. In the temperature range of 373-273 K, the surface-recombination velocity 5 of 0.5-μm n GaN overetched circular-mesa diodes was derived, respectively, as 2-10 × 10 7 and 1 × 10 7 cm/s for diodes with and without a mesa-field-plate termination structure consisting of dielectric and metal layers. It was shown that IF (V F
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2185241