Quantum Efficiency Determination of a Novel CMOS Design for Fast Imaging Applications in the Extreme Ultraviolet

We present quantum efficiency (QE) and quantum yield (QY) measurements of novel deep optical stack etching extreme-ultraviolet complementary metal-oxide-semiconductor photodiodes of different sizes and derive future potentials. QE values between 24% and 50% at 13.5 nm were achieved. Variations in QE...

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Veröffentlicht in:	IEEE transactions on electron devices 2012-03, Vol.59 (3), p.846-849
Hauptverfasser:	Herbert, Stefan, Banyay, M., Maryasov, A. P., Hochschulz, F., Paschen, U., Vogt, H., Juschkin, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CMOS integrated circuits Defect inspection Design. Technologies. Operation analysis. Testing Educational institutions Electronics EUV microscopy Exact sciences and technology extreme ultraviolet (EUV) complementary metal-oxide-semiconductor (CMOS) Integrated circuits Optical imaging Optical sensors Optoelectronic devices Photodiodes Photonics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Ultraviolet sources
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Beschreibung
Zusammenfassung:	We present quantum efficiency (QE) and quantum yield (QY) measurements of novel deep optical stack etching extreme-ultraviolet complementary metal-oxide-semiconductor photodiodes of different sizes and derive future potentials. QE values between 24% and 50% at 13.5 nm were achieved. Variations in QE and QY measurement results were analyzed.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2011.2177838