1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS Method
We have fabricated thin-film transistors (TFTs) and liquid-crystal displays (LCDs) with monolithic drivers on glass substrates and achieved ultralow power consumption by operating with a low power-supply voltage at 3 V. The gate insulator of the TFTs has a stack structure with an ultrathin interfaci...
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| Veröffentlicht in: | IEEE transactions on electron devices 2012-02, Vol.59 (2), p.385-392 |
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| container_title | IEEE transactions on electron devices |
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| creator | Kubota, Y. Matsumoto, T. Tsuji, H. Suzuki, N. Imai, S. Kobayashi, H. |
| description | We have fabricated thin-film transistors (TFTs) and liquid-crystal displays (LCDs) with monolithic drivers on glass substrates and achieved ultralow power consumption by operating with a low power-supply voltage at 3 V. The gate insulator of the TFTs has a stack structure with an ultrathin interfacial SiO 2 layer formed by nitric acid oxidation of silicon and a 40-nm-thick SiO 2 layer formed by plasma-enhanced chemical vapor deposition. Owing to the TFTs with the thin gate insulator, the driving circuits of the LCDs can be operated at a supply voltage of 1.5 V, which is much lower than that of conventional LCDs of 10-15 V. |
| doi_str_mv | 10.1109/TED.2011.2175395 |
| format | Article |
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The gate insulator of the TFTs has a stack structure with an ultrathin interfacial SiO 2 layer formed by nitric acid oxidation of silicon and a 40-nm-thick SiO 2 layer formed by plasma-enhanced chemical vapor deposition. Owing to the TFTs with the thin gate insulator, the driving circuits of the LCDs can be operated at a supply voltage of 1.5 V, which is much lower than that of conventional LCDs of 10-15 V.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2011.2175395</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Display ; Driving circuit ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Insulators ; Integrated circuits ; Inverters ; liquid-crystal display (LCD) ; Logic gates ; low power consumption ; nitric acid oxidation of silicon (NAOS) ; Ring oscillators ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The gate insulator of the TFTs has a stack structure with an ultrathin interfacial SiO 2 layer formed by nitric acid oxidation of silicon and a 40-nm-thick SiO 2 layer formed by plasma-enhanced chemical vapor deposition. Owing to the TFTs with the thin gate insulator, the driving circuits of the LCDs can be operated at a supply voltage of 1.5 V, which is much lower than that of conventional LCDs of 10-15 V.</description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Display</subject><subject>Driving circuit</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Insulators</subject><subject>Integrated circuits</subject><subject>Inverters</subject><subject>liquid-crystal display (LCD)</subject><subject>Logic gates</subject><subject>low power consumption</subject><subject>nitric acid oxidation of silicon (NAOS)</subject><subject>Ring oscillators</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Thin film transistors</subject><subject>thin-film transistor (TFT)</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFPwzAMhSMEEmNwR-KSC8cUJ2ma9DgNBkiDIa2DY-WlKQsq65QUTfv3dNq0k2X7PT_rI-SWQ8I55A_F02MigPNEcK1krs7IgCulWZ6l2TkZAHDDcmnkJbmK8advszQVA_LFE8U-2WzjAna-XdNF0wVs2i39aLcu0LEP9s93tK37QbNjc0-LSRHpBJfBW-xcRRfRr79pt3L0fTSb0zfXrdrqmlzU2ER3c6xDspg8FeMXNp09v45HU2alyjtW61Rm1iyXtsotd0pXQokMjEGtEZGbyixriUpWYIDngisDFoRLtUNtIZVDAoe7NrQxBleXm-B_MexKDuUeTNmDKfdgyiOY3nJ_sGwwWmzqgGvr48knVGr6LNPr7g4675w7rffPASj5D_AladA</recordid><startdate>20120201</startdate><enddate>20120201</enddate><creator>Kubota, Y.</creator><creator>Matsumoto, T.</creator><creator>Tsuji, H.</creator><creator>Suzuki, N.</creator><creator>Imai, S.</creator><creator>Kobayashi, H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120201</creationdate><title>1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS Method</title><author>Kubota, Y. ; Matsumoto, T. ; Tsuji, H. ; Suzuki, N. ; Imai, S. ; Kobayashi, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-f7436c8bbcd9c1e57d2526088a77aaa18d8bf3a53d0801921580c02e47ea7c043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Display</topic><topic>Driving circuit</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Insulators</topic><topic>Integrated circuits</topic><topic>Inverters</topic><topic>liquid-crystal display (LCD)</topic><topic>Logic gates</topic><topic>low power consumption</topic><topic>nitric acid oxidation of silicon (NAOS)</topic><topic>Ring oscillators</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Thin film transistors</topic><topic>thin-film transistor (TFT)</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kubota, Y.</creatorcontrib><creatorcontrib>Matsumoto, T.</creatorcontrib><creatorcontrib>Tsuji, H.</creatorcontrib><creatorcontrib>Suzuki, N.</creatorcontrib><creatorcontrib>Imai, S.</creatorcontrib><creatorcontrib>Kobayashi, H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kubota, Y.</au><au>Matsumoto, T.</au><au>Tsuji, H.</au><au>Suzuki, N.</au><au>Imai, S.</au><au>Kobayashi, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS Method</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2012-02-01</date><risdate>2012</risdate><volume>59</volume><issue>2</issue><spage>385</spage><epage>392</epage><pages>385-392</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We have fabricated thin-film transistors (TFTs) and liquid-crystal displays (LCDs) with monolithic drivers on glass substrates and achieved ultralow power consumption by operating with a low power-supply voltage at 3 V. The gate insulator of the TFTs has a stack structure with an ultrathin interfacial SiO 2 layer formed by nitric acid oxidation of silicon and a 40-nm-thick SiO 2 layer formed by plasma-enhanced chemical vapor deposition. Owing to the TFTs with the thin gate insulator, the driving circuits of the LCDs can be operated at a supply voltage of 1.5 V, which is much lower than that of conventional LCDs of 10-15 V.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2011.2175395</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.385-392 |
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| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Display Driving circuit Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Insulators Integrated circuits Inverters liquid-crystal display (LCD) Logic gates low power consumption nitric acid oxidation of silicon (NAOS) Ring oscillators Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Thin film transistors thin-film transistor (TFT) Threshold voltage Transistors |
| title | 1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS Method |
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