Fast V Transients After the Program/Erase of Flash Memory Stacks With High- k Dielectrics

A fast response technique is developed to investigate the short-term postprogram and post-erase discharge in Flash memory devices. The procedure is based on fast V TH -evaluation methods developed for bias temperature instability and provides the transient characteristics after 20 ms under the progr...

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Veröffentlicht in:	IEEE transactions on electron devices 2011-03, Vol.58 (3), p.631-640
Hauptverfasser:	Toledano-Luque, María, Degraeve, Robin, Zahid, Mohammed B, Kaczer, Ben, Blomme, Pieter, Kittl, Jorge A, Jurczak, M, Van Houdt, Jan, Groeseneken, Guido
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Charge trap memory Dielectrics Discharges Electron traps High K dielectric materials high- k dielectrics Logic gates TaN-AlO-SiN-oxide-Si (TANOS) Transient analysis trap characterization
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