Fast V Transients After the Program/Erase of Flash Memory Stacks With High- k Dielectrics

A fast response technique is developed to investigate the short-term postprogram and post-erase discharge in Flash memory devices. The procedure is based on fast V TH -evaluation methods developed for bias temperature instability and provides the transient characteristics after 20 ms under the program or erase conditions. The following different structures are investigated: 1) SiO 2 /high-k stacks; 2) charge trap memories; 3) and floating gate memories. Dielectrics targeted for Flash memory applications are used as charge trap layers and interpoly di electrics. In this paper, we show results on Al 2 O 3 , DyScO, GdScO, and hexagonal and perovskite LuAlO. The postprogram and post-erase curves hold useful information about the dielectric properties and are used as a fast screening technique for alternative materials.