Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs
In this paper, a comprehensive study of hot- carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same d...
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| Veröffentlicht in: | IEEE transactions on electron devices 2009-05, Vol.56 (5), p.1063-1069 |
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| creator | Maji, D. Crupi, F. Amat, E. Simoen, E. De Jaeger, B. Brunco, D.P. Manoj, C.R. Rao, V.R. Magnone, P. Giusi, G. Pace, C. Pantisano, L. Mitard, J. Rodriguez, R. Nafria, M. |
| description | In this paper, a comprehensive study of hot- carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: (1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two orders higher as compared to their Si counterpart; (2) NBTI degradation is a lesser concern than HCI for Ge-on-Si pMOSFETs; and (3) increasing the Si-passivation thickness from four to eight monolayers provides a remarkable lifetime improvement. |
| doi_str_mv | 10.1109/TED.2009.2015854 |
| format | Article |
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Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: (1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two orders higher as compared to their Si counterpart; (2) NBTI degradation is a lesser concern than HCI for Ge-on-Si pMOSFETs; and (3) increasing the Si-passivation thickness from four to eight monolayers provides a remarkable lifetime improvement.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2009.2015854</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Carrier injection ; Degradation ; Devices ; Electronics ; Exact sciences and technology ; Germanium ; high- k ; hot carrier (HC) ; Human computer interaction ; impact ionization ; Instability ; Ionization ; Logic gates ; MOSFETs ; negative bias temperature instability (NBTI) ; Niobium base alloys ; Optimization ; pMOSFET ; Reliability ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Stress ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1063-1069</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-897a2a83a9a540127c3c8bd03a185253fd3a1b4a1cee4d2ae4563a72726c9c333</citedby><cites>FETCH-LOGICAL-c384t-897a2a83a9a540127c3c8bd03a185253fd3a1b4a1cee4d2ae4563a72726c9c333</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4804776$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4804776$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21741700$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Maji, D.</creatorcontrib><creatorcontrib>Crupi, F.</creatorcontrib><creatorcontrib>Amat, E.</creatorcontrib><creatorcontrib>Simoen, E.</creatorcontrib><creatorcontrib>De Jaeger, B.</creatorcontrib><creatorcontrib>Brunco, D.P.</creatorcontrib><creatorcontrib>Manoj, C.R.</creatorcontrib><creatorcontrib>Rao, V.R.</creatorcontrib><creatorcontrib>Magnone, P.</creatorcontrib><creatorcontrib>Giusi, G.</creatorcontrib><creatorcontrib>Pace, C.</creatorcontrib><creatorcontrib>Pantisano, L.</creatorcontrib><creatorcontrib>Mitard, J.</creatorcontrib><creatorcontrib>Rodriguez, R.</creatorcontrib><creatorcontrib>Nafria, M.</creatorcontrib><title>Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this paper, a comprehensive study of hot- carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: (1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two orders higher as compared to their Si counterpart; (2) NBTI degradation is a lesser concern than HCI for Ge-on-Si pMOSFETs; and (3) increasing the Si-passivation thickness from four to eight monolayers provides a remarkable lifetime improvement.</description><subject>Applied sciences</subject><subject>Carrier injection</subject><subject>Degradation</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Germanium</subject><subject>high- k</subject><subject>hot carrier (HC)</subject><subject>Human computer interaction</subject><subject>impact ionization</subject><subject>Instability</subject><subject>Ionization</subject><subject>Logic gates</subject><subject>MOSFETs</subject><subject>negative bias temperature instability (NBTI)</subject><subject>Niobium base alloys</subject><subject>Optimization</subject><subject>pMOSFET</subject><subject>Reliability</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Stress</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kb1rHDEQxUVwIGc7fSDNYkhIs44-Rl9lODu2weEgtps0Yk6rDTK72rO0Vzh_fXTc4cKFm5nR6PeeEI-QT4yeM0bt9_vLi3NOqa2FSSPhHVkwKXVrFagjsqCUmdYKIz6Q41Ie61EB8AX585C6kMuMqYvpb1Nbs9rMcYz_cI5Taqa-uZ7mdok5x5Cb32GIuI5DnJ-bmJqrkEdMcTu2U2rv6tpXyebX6u7n5X05Je97HEr4eOgn5KGul9ft7erqZvnjtvXCwNwaq5GjEWhRAmVce-HNuqMCmZFcir6r0xqQ-RCg4xhAKoGaa6689UKIE_J177vJ09M2lNmNsfgwDJjCtC1OAFglKFTw25sgU5oJsJbRip69Qh-nbU71G85IZbkBLStE95DPUyk59G6T44j52THqdqG4GorbheIOoVTJl4MvFo9DnzH5WF50nGlgmu7e_7znYgjh5RoMBa2V-A9wrpN5</recordid><startdate>20090501</startdate><enddate>20090501</enddate><creator>Maji, D.</creator><creator>Crupi, F.</creator><creator>Amat, E.</creator><creator>Simoen, E.</creator><creator>De Jaeger, B.</creator><creator>Brunco, D.P.</creator><creator>Manoj, C.R.</creator><creator>Rao, V.R.</creator><creator>Magnone, P.</creator><creator>Giusi, G.</creator><creator>Pace, C.</creator><creator>Pantisano, L.</creator><creator>Mitard, J.</creator><creator>Rodriguez, R.</creator><creator>Nafria, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20090501</creationdate><title>Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs</title><author>Maji, D. ; Crupi, F. ; Amat, E. ; Simoen, E. ; De Jaeger, B. ; Brunco, D.P. ; Manoj, C.R. ; Rao, V.R. ; Magnone, P. ; Giusi, G. ; Pace, C. ; Pantisano, L. ; Mitard, J. ; Rodriguez, R. ; Nafria, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-897a2a83a9a540127c3c8bd03a185253fd3a1b4a1cee4d2ae4563a72726c9c333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Carrier injection</topic><topic>Degradation</topic><topic>Devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Germanium</topic><topic>high- k</topic><topic>hot carrier (HC)</topic><topic>Human computer interaction</topic><topic>impact ionization</topic><topic>Instability</topic><topic>Ionization</topic><topic>Logic gates</topic><topic>MOSFETs</topic><topic>negative bias temperature instability (NBTI)</topic><topic>Niobium base alloys</topic><topic>Optimization</topic><topic>pMOSFET</topic><topic>Reliability</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Stress</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Maji, D.</creatorcontrib><creatorcontrib>Crupi, F.</creatorcontrib><creatorcontrib>Amat, E.</creatorcontrib><creatorcontrib>Simoen, E.</creatorcontrib><creatorcontrib>De Jaeger, B.</creatorcontrib><creatorcontrib>Brunco, D.P.</creatorcontrib><creatorcontrib>Manoj, C.R.</creatorcontrib><creatorcontrib>Rao, V.R.</creatorcontrib><creatorcontrib>Magnone, P.</creatorcontrib><creatorcontrib>Giusi, G.</creatorcontrib><creatorcontrib>Pace, C.</creatorcontrib><creatorcontrib>Pantisano, L.</creatorcontrib><creatorcontrib>Mitard, J.</creatorcontrib><creatorcontrib>Rodriguez, R.</creatorcontrib><creatorcontrib>Nafria, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Maji, D.</au><au>Crupi, F.</au><au>Amat, E.</au><au>Simoen, E.</au><au>De Jaeger, B.</au><au>Brunco, D.P.</au><au>Manoj, C.R.</au><au>Rao, V.R.</au><au>Magnone, P.</au><au>Giusi, G.</au><au>Pace, C.</au><au>Pantisano, L.</au><au>Mitard, J.</au><au>Rodriguez, R.</au><au>Nafria, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2009-05-01</date><risdate>2009</risdate><volume>56</volume><issue>5</issue><spage>1063</spage><epage>1069</epage><pages>1063-1069</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this paper, a comprehensive study of hot- carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: (1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two orders higher as compared to their Si counterpart; (2) NBTI degradation is a lesser concern than HCI for Ge-on-Si pMOSFETs; and (3) increasing the Si-passivation thickness from four to eight monolayers provides a remarkable lifetime improvement.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2009.2015854</doi><tpages>7</tpages></addata></record> |
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| subjects | Applied sciences Carrier injection Degradation Devices Electronics Exact sciences and technology Germanium high- k hot carrier (HC) Human computer interaction impact ionization Instability Ionization Logic gates MOSFETs negative bias temperature instability (NBTI) Niobium base alloys Optimization pMOSFET Reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Stress Transistors |
| title | Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs |
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