A 12-GHz Low-Phase-Noise Voltage-Controlled Oscillator Using Novel Field-Plate CMOS Transistors

This paper presents a voltage-controlled oscillator (VCO) with low-phase-noise performance based on 0.13-mum field- plate (FP) CMOS transistors. The proposed FP transistors exhibit lesser flicker noise (1// noise) than the standard transistors because electron flow is suppressed in the deeper channe...

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Veröffentlicht in:IEEE transactions on electron devices 2007-10, Vol.54 (10), p.2803-2807
Hauptverfasser: WEI, Chien-Cheng, CHIU, Hsien-Chin, FENG, Wu-Shiung
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper presents a voltage-controlled oscillator (VCO) with low-phase-noise performance based on 0.13-mum field- plate (FP) CMOS transistors. The proposed FP transistors exhibit lesser flicker noise (1// noise) than the standard transistors because electron flow is suppressed in the deeper channel. Cross-coupled 12-GHz VCO with standard and FP transistors was simultaneously designed and fabricated in a TSMC 0.13-mum CMOS process. The measured phase noise of this novel design is -122 dBc/Hz at an offset frequency of 1 MHz. This novel design offered an average 5-dBc phase-noise improvement over the VCO with standard transistors at offset frequencies from 100 kHz to 1MHz.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.904482