A 12-GHz Low-Phase-Noise Voltage-Controlled Oscillator Using Novel Field-Plate CMOS Transistors
This paper presents a voltage-controlled oscillator (VCO) with low-phase-noise performance based on 0.13-mum field- plate (FP) CMOS transistors. The proposed FP transistors exhibit lesser flicker noise (1// noise) than the standard transistors because electron flow is suppressed in the deeper channe...
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Veröffentlicht in: | IEEE transactions on electron devices 2007-10, Vol.54 (10), p.2803-2807 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This paper presents a voltage-controlled oscillator (VCO) with low-phase-noise performance based on 0.13-mum field- plate (FP) CMOS transistors. The proposed FP transistors exhibit lesser flicker noise (1// noise) than the standard transistors because electron flow is suppressed in the deeper channel. Cross-coupled 12-GHz VCO with standard and FP transistors was simultaneously designed and fabricated in a TSMC 0.13-mum CMOS process. The measured phase noise of this novel design is -122 dBc/Hz at an offset frequency of 1 MHz. This novel design offered an average 5-dBc phase-noise improvement over the VCO with standard transistors at offset frequencies from 100 kHz to 1MHz. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2007.904482 |