Stability analysis of current programmed a-Si:H AMOLED pixel circuits

In this paper, we present self-compensating current mirror-based pixel circuits, and analyze basic stability issues to provide a deeper understanding of circuit operation, and the impact of thin film transistor bias nonidealities, which can lead to the long-term (and gradual) instabilities in pixel...

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Veröffentlicht in:	IEEE transactions on electron devices 2004-12, Vol.51 (12), p.2019-2025
Hauptverfasser:	Sakariya, K., Servati, P., Nathan, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Active matrix Amorphous semiconductors amorphous silicon Analog circuits Applied sciences Circuit properties current programmed pixel circuit Display Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Optoelectronic devices organic light emitting diode (OLED) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon materials/devices Thin film transistors thin-film transistor (TFT) threshold voltage shift Transistors
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Beschreibung
Zusammenfassung:	In this paper, we present self-compensating current mirror-based pixel circuits, and analyze basic stability issues to provide a deeper understanding of circuit operation, and the impact of thin film transistor bias nonidealities, which can lead to the long-term (and gradual) instabilities in pixel drive current. The analysis also provides the circuit designer a means to tailor the pixel drive current stability to the long-term brightness degradation characteristics of the organic light-emitting diode.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2004.838452