Effect of interfacial oxide thickness on 1/f noise in polysilicon emitter BJTs

The role of the interfacial oxide (IFO) between the polysilicon and monosilicon emitter regions on the noise behavior of n-p-n poly-emitter bipolar transistors was investigated through 1/f noise measurements. Bipolar junction transistors with different IFO thickness, and emitter geometry were utiliz...

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Veröffentlicht in:	IEEE transactions on electron devices 2004-09, Vol.51 (9), p.1504-1513
Hauptverfasser:	Md Mazhar Ul Hoque, Celik-Butler, Z., Lan, D., Weiser, D., Trogolo, J., Green, K.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accumulators Applied sciences Bipolar transistors Collectors Electric potential Electronics Emittance Emitters (electron) Exact sciences and technology Minority carriers Noise Oxides p-i-n diodes Random noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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