Effect of interfacial oxide thickness on 1/f noise in polysilicon emitter BJTs
The role of the interfacial oxide (IFO) between the polysilicon and monosilicon emitter regions on the noise behavior of n-p-n poly-emitter bipolar transistors was investigated through 1/f noise measurements. Bipolar junction transistors with different IFO thickness, and emitter geometry were utiliz...
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Veröffentlicht in: | IEEE transactions on electron devices 2004-09, Vol.51 (9), p.1504-1513 |
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Sprache: | eng |
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Zusammenfassung: | The role of the interfacial oxide (IFO) between the polysilicon and monosilicon emitter regions on the noise behavior of n-p-n poly-emitter bipolar transistors was investigated through 1/f noise measurements. Bipolar junction transistors with different IFO thickness, and emitter geometry were utilized. Measurements with variable external base bias resistance (R/sub S/) were used to investigate the relative contribution of each individual noise source from the base current (S/sub IB/), the collector current (S/sub IC/) and, the internal emitter and base series resistances (S/sub Vr/). When the voltage noise power spectral densities S/sub VC/ and S/sub VB/ were measured across resistances in series with the collector and base, respectively, using a relatively large R/sub S/ (/spl sim/1 M/spl Omega/), S/sub IB/ was found to have the dominant noise contribution at lower bias currents. On the other hand, when the voltage noise power spectral densities S/sub VC/ and S/sub VE/ were measured across resistances in series with the collector and emitter, respectively, in a different experimental setup with a low R/sub S/ value, S/sub Vr/ was found to have the dominant noise contribution at higher bias currents. IFO was found to increase S/sub IB/, S/sub IC/, and S/sub Vr/. S/sub IB/ was modeled as a combination of tunneling and diffusion fluctuations of the minority carriers in the emitter; whereas S/sub IC/ was modeled as a combination of number and diffusion fluctuations of the minority carriers in the base. S/sub Vr/ was attributed to the internal emitter resistance noise originating from the fluctuation in the majority carrier flow through the IFO. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2004.833953 |