A novel low on-resistance Schottky-barrier diode with p-buried floating layer structure

A novel low on-resistance Schottky-barrier diode with p-buried floating layer structure

A novel low on-resistance Schottky-barrier diode (SBD) structure with a p-buried floating layer is demonstrated by fabricating 300-V SBDs using a buried epitaxial growth technique. The fabricated SBDs realize a 50% reduction of chip area and show a possibility of higher breakdown voltage SBD of over...

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Veröffentlicht in:IEEE transactions on electron devices 2004-05, Vol.51 (5), p.797-802
Hauptverfasser: Saito, W., Omura, I., Tokano, K., Ogura, T., Ohashi, H.
Format: Artikel
Sprache:eng
Schlagworte:
Breakdown
Chip formation
Diodes
Electric potential
Epitaxial growth
Floating structures
Power semiconductor diodes
Reduction
Schottky diodes
Voltage
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Zusammenfassung:A novel low on-resistance Schottky-barrier diode (SBD) structure with a p-buried floating layer is demonstrated by fabricating 300-V SBDs using a buried epitaxial growth technique. The fabricated SBDs realize a 50% reduction of chip area and show a possibility of higher breakdown voltage SBD of over 100 V. In addition, both the low on-resistance and the soft-recovery characteristics can be realized by the p-buried floating layer structure. The demonstrated structure is very attractive for reduction of power dissipation without electromagnetic interference noise increase.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.826886