DC SPICE model for nanocrystalline and microcrystalline silicon TFTs

In this paper, we present a physically-based analytical model for n-channel nanocrystalline and microcrystalline thin-film transistors suitable for implementation in circuit simulators such as SPICE. The model is based on existing models for amorphous silicon thin film transistors, which have been e...

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Veröffentlicht in:IEEE transactions on electron devices 2002-11, Vol.49 (11), p.1979-1984
Hauptverfasser: Dosev, D., Ytterdal, T., Pallares, J., Marsal, L.F., Iniguez, B.
Format: Artikel
Sprache:eng
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Zusammenfassung:In this paper, we present a physically-based analytical model for n-channel nanocrystalline and microcrystalline thin-film transistors suitable for implementation in circuit simulators such as SPICE. The model is based on existing models for amorphous silicon thin film transistors, which have been extended to account for observed physical phenomena in nanocrystalline and microcrystalline thin film transistors. The proposed model has been verified for the most important regions of operation of the devices and has shown good agreement with experimental data.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2002.804719