Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (N it ) and bulk oxide charge Q ox creation in the channel and in the drift regions separately. The growth rat...

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Veröffentlicht in:IEEE transactions on device and materials reliability 2006-09, Vol.6 (3), p.358-363
Hauptverfasser: Chih-Chang Cheng, Lin, J.F., Tahui Wang, Hsieh, T.H., Tzeng, J.T., Jong, Y.C., Liou, R.S., Pan, S.C., Hsu, S.L.
Format: Magazinearticle
Sprache:eng
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Zusammenfassung:Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (N it ) and bulk oxide charge Q ox creation in the channel and in the drift regions separately. The growth rates of N it and Q ox are extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximum I g stress causes the largest drain current and subthreshold slope degradation because of both N it generation in the channel and Q ox creation in the bird's beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2006.883834