Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique
Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (N it ) and bulk oxide charge Q ox creation in the channel and in the drift regions separately. The growth rat...
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Veröffentlicht in: | IEEE transactions on device and materials reliability 2006-09, Vol.6 (3), p.358-363 |
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Hauptverfasser: | , , , , , , , , |
Format: | Magazinearticle |
Sprache: | eng |
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Zusammenfassung: | Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (N it ) and bulk oxide charge Q ox creation in the channel and in the drift regions separately. The growth rates of N it and Q ox are extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximum I g stress causes the largest drain current and subthreshold slope degradation because of both N it generation in the channel and Q ox creation in the bird's beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation |
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ISSN: | 1530-4388 1558-2574 |
DOI: | 10.1109/TDMR.2006.883834 |