High-Linearity Tunable Low-Gₘ Transconductor Based on Bootstrapping

In this brief, a novel pseudo-differential low-transconductance amplifier is proposed based on the bootstrapping technique. The transconductor is implemented using two voltage follower topologies as amplifiers with their outputs connected to both terminals of a resistor, thus bootstrapping the volta...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2022-02, Vol.69 (2), p.259-263
Hauptverfasser: Cinco-Izquierdo, O. J., de la Cruz-Blas, C. A., Sanz-Pascual, M. T.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this brief, a novel pseudo-differential low-transconductance amplifier is proposed based on the bootstrapping technique. The transconductor is implemented using two voltage follower topologies as amplifiers with their outputs connected to both terminals of a resistor, thus bootstrapping the voltages at these terminals to increase the equivalent resistance value, and achieve a very low transconductance without the need for large passive components. In this way, a highly-linear compact structure is designed whose transconductance can be tuned by external current sources. The circuit was fabricated in a standard 0.18 ~\mu m CMOS process. The experimental results show a tunable transconductance in the range of tens of nA/V , with a total harmonic distortion lower than -40 dB at 350 mVpp\text{@}1kHz . The power consumption of the amplifier is 4 ~\mu W under a 1.8 V supply voltage.
ISSN:1549-7747
1558-3791
DOI:10.1109/TCSII.2021.3090983