A 0.3-1.2 V Schottky-Based CMOS ZTC Voltage Reference
A voltage reference based on MOSFETs operated under Zero Temperature Coefficient (ZTC) bias is proposed. The circuit operates in a power supply voltage range from 0.3 V up to 1.2 V and outputs three different reference voltages using Standard-VT (SVT), Low-VT (LVT), and Zero-VT (ZVT) MOS transistors...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2019-10, Vol.66 (10), p.1663-1667 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A voltage reference based on MOSFETs operated under Zero Temperature Coefficient (ZTC) bias is proposed. The circuit operates in a power supply voltage range from 0.3 V up to 1.2 V and outputs three different reference voltages using Standard-VT (SVT), Low-VT (LVT), and Zero-VT (ZVT) MOS transistors biased near their ZTC point by a single PTAT current reference. Measurements on 15 circuit samples fabricated in a standard 0.13-μm CMOS process show a worst-case normalized standard deviation (σ/μ) of 3% (SVT), 5.1% (LVT) and 10.8% (ZVT) respectively with a 75% of confidence level. At the nominal supply voltage of 0.45 V, the measured effective temperature coefficients (TCeff) range from 140 to 200 ppm/oC over the full commercial temperature range. At room temperature (25 oC), line sensitivity in the ZVT VR is just 1.3%/100 mV, over the whole supply range. The proposed reference draws around 5 μW and occupies 0.014 mm 2 of silicon area. |
---|---|
ISSN: | 1549-7747 1558-3791 |
DOI: | 10.1109/TCSII.2019.2932281 |