A 0.3-1.2 V Schottky-Based CMOS ZTC Voltage Reference

A voltage reference based on MOSFETs operated under Zero Temperature Coefficient (ZTC) bias is proposed. The circuit operates in a power supply voltage range from 0.3 V up to 1.2 V and outputs three different reference voltages using Standard-VT (SVT), Low-VT (LVT), and Zero-VT (ZVT) MOS transistors...

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Veröffentlicht in:IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2019-10, Vol.66 (10), p.1663-1667
Hauptverfasser: Toledo, Pedro, Cordova, David, Klimach, Hamilton, Bampi, Sergio, Crovetti, Paolo S.
Format: Artikel
Sprache:eng
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Zusammenfassung:A voltage reference based on MOSFETs operated under Zero Temperature Coefficient (ZTC) bias is proposed. The circuit operates in a power supply voltage range from 0.3 V up to 1.2 V and outputs three different reference voltages using Standard-VT (SVT), Low-VT (LVT), and Zero-VT (ZVT) MOS transistors biased near their ZTC point by a single PTAT current reference. Measurements on 15 circuit samples fabricated in a standard 0.13-μm CMOS process show a worst-case normalized standard deviation (σ/μ) of 3% (SVT), 5.1% (LVT) and 10.8% (ZVT) respectively with a 75% of confidence level. At the nominal supply voltage of 0.45 V, the measured effective temperature coefficients (TCeff) range from 140 to 200 ppm/oC over the full commercial temperature range. At room temperature (25 oC), line sensitivity in the ZVT VR is just 1.3%/100 mV, over the whole supply range. The proposed reference draws around 5 μW and occupies 0.014 mm 2 of silicon area.
ISSN:1549-7747
1558-3791
DOI:10.1109/TCSII.2019.2932281