I-V characteristics for Silicon Schottky solar cells

I-V characteristics for Silicon Schottky solar cells

A special-layered Schottky solar cell has been constructed which produces 9.5-percent sunlight efficiency over a 1-cm 2 area. This solar cell has a fill factor of 0.60 compared to 0.58 for a commercial p-n silicon cell. Series resistance of 5 Ω is shown to reduce the theoretical fill factor from 0.6...

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Bibliographische Detailangaben
Veröffentlicht in:Proc. IEEE; (United States) 1975-01, Vol.63 (1), p.206-208
Hauptverfasser: Anderson, W.A., Milano, R.A.
Format: Artikel
Sprache:eng
Schlagworte:
140501 - Solar Energy Conversion- Photovoltaic Conversion
DIRECT ENERGY CONVERTERS
EFFICIENCY
Equations
FABRICATION
FILL FACTORS
Fluctuations
Light scattering
Magnetic fields
Nonhomogeneous media
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
Plasma transport processes
Rough surfaces
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
Silicon
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR ENERGY
Tellurium
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Beschreibung
Zusammenfassung:A special-layered Schottky solar cell has been constructed which produces 9.5-percent sunlight efficiency over a 1-cm 2 area. This solar cell has a fill factor of 0.60 compared to 0.58 for a commercial p-n silicon cell. Series resistance of 5 Ω is shown to reduce the theoretical fill factor from 0.67 to 0.42 for a Schottky cell. The diode quality factor n is shown to significantly increase open-circuit voltage and yet not appreciably influence the fill factor.
ISSN:0018-9219
DOI:10.1109/PROC.1975.9727