The use of single-carrier semiconductor model in wave propagation problems

The use of single-carrier semiconductor model in wave propagation problems

Conditions for neglecting the effects of hole motion in an intrinsic semiconductor subjected to a constant magnetic field are derived from the hydrodynamical equations for the charge carriers. Under the collision-dominated regime in semiconductor materials where the electron-hole mass ratio is very...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Proceedings of the IEEE 1973-01, Vol.61 (9), p.1367-1368
1. Verfasser: Freire, G.F.
Format: Artikel
Sprache:eng
Schlagworte:
Charge carrier processes
Charge carriers
Conducting materials
Cyclotrons
Electron mobility
Equations
Frequency
Magnetic fields
Network-on-a-chip
Semiconductor materials
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Conditions for neglecting the effects of hole motion in an intrinsic semiconductor subjected to a constant magnetic field are derived from the hydrodynamical equations for the charge carriers. Under the collision-dominated regime in semiconductor materials where the electron-hole mass ratio is very small, the applied magnetic field and electron drift velocities values are shown to be limited to prescribed ranges in order that a single stream model be valid.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1973.9280