Limitations on high-temperature processing of aluminum-copper metallization
Disruptive alteration of the structure of heat-treated aluminum-copper metallization either containing or contacting silicon is reported. Effects are attributed to eutectic formation in the aluminum-copper-silicon system. Processing temperatures less than 525°C are recommended for aluminum metalliza...
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| Veröffentlicht in: | Proceedings of the IEEE 1973-01, Vol.61 (4), p.476-477 |
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| container_end_page | 477 |
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| container_title | Proceedings of the IEEE |
| container_volume | 61 |
| creator | Learn, A.J. |
| description | Disruptive alteration of the structure of heat-treated aluminum-copper metallization either containing or contacting silicon is reported. Effects are attributed to eutectic formation in the aluminum-copper-silicon system. Processing temperatures less than 525°C are recommended for aluminum metallization containing copper. |
| doi_str_mv | 10.1109/PROC.1973.9071 |
| format | Article |
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Effects are attributed to eutectic formation in the aluminum-copper-silicon system. 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Effects are attributed to eutectic formation in the aluminum-copper-silicon system. Processing temperatures less than 525°C are recommended for aluminum metallization containing copper.</description><subject>Aluminum alloys</subject><subject>Copper</subject><subject>Degradation</subject><subject>Electromigration</subject><subject>Inorganic materials</subject><subject>Integrated circuit metallization</subject><subject>Semiconductor films</subject><subject>Silicon alloys</subject><subject>Silicon devices</subject><subject>Temperature</subject><issn>0018-9219</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1973</creationdate><recordtype>article</recordtype><recordid>eNpFkLtOxDAURF2AxLLQ0tDkBxLuteM4LlHEY0WkRQhqy3GcXaO8ZCcFfD0Ji0Q1zcyRzhByg5Aggrx7fdsXCUrBEgkCz8gGAPNYUpQX5DKETwBgPGMb8lK6zk16ckMfoqGPju5wjCfbjdbrafY2Gv1gbAiuP0RDE-l27lw_d7EZxqUSdXbSbeu-fwFX5LzRbbDXf7klH48P78VzXO6fdsV9GRuKdIqxgiZvkLKaZVCnprJNLcEA5UJgLVFTIVieacw5FQyAy1RobmphNKtTVrEtSU5c44cQvG3U6F2n_ZdCUKu-WvXVqq9W_WVwexo4a-1_OeW43MJ-AK62WXE</recordid><startdate>19730101</startdate><enddate>19730101</enddate><creator>Learn, A.J.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19730101</creationdate><title>Limitations on high-temperature processing of aluminum-copper metallization</title><author>Learn, A.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c212t-1b0f8f123d360d4cbefd90c025771d91a277386a185273005947a5cd7ca3d43b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1973</creationdate><topic>Aluminum alloys</topic><topic>Copper</topic><topic>Degradation</topic><topic>Electromigration</topic><topic>Inorganic materials</topic><topic>Integrated circuit metallization</topic><topic>Semiconductor films</topic><topic>Silicon alloys</topic><topic>Silicon devices</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Learn, A.J.</creatorcontrib><collection>CrossRef</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Learn, A.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Limitations on high-temperature processing of aluminum-copper metallization</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>1973-01-01</date><risdate>1973</risdate><volume>61</volume><issue>4</issue><spage>476</spage><epage>477</epage><pages>476-477</pages><issn>0018-9219</issn><coden>IEEPAD</coden><abstract>Disruptive alteration of the structure of heat-treated aluminum-copper metallization either containing or contacting silicon is reported. Effects are attributed to eutectic formation in the aluminum-copper-silicon system. Processing temperatures less than 525°C are recommended for aluminum metallization containing copper.</abstract><pub>IEEE</pub><doi>10.1109/PROC.1973.9071</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 0018-9219 |
| ispartof | Proceedings of the IEEE, 1973-01, Vol.61 (4), p.476-477 |
| issn | 0018-9219 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_PROC_1973_9071 |
| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum alloys Copper Degradation Electromigration Inorganic materials Integrated circuit metallization Semiconductor films Silicon alloys Silicon devices Temperature |
| title | Limitations on high-temperature processing of aluminum-copper metallization |
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