Limitations on high-temperature processing of aluminum-copper metallization

Limitations on high-temperature processing of aluminum-copper metallization

Disruptive alteration of the structure of heat-treated aluminum-copper metallization either containing or contacting silicon is reported. Effects are attributed to eutectic formation in the aluminum-copper-silicon system. Processing temperatures less than 525°C are recommended for aluminum metalliza...

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Veröffentlicht in:Proceedings of the IEEE 1973-01, Vol.61 (4), p.476-477
1. Verfasser: Learn, A.J.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum alloys
Copper
Degradation
Electromigration
Inorganic materials
Integrated circuit metallization
Semiconductor films
Silicon alloys
Silicon devices
Temperature
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Zusammenfassung:Disruptive alteration of the structure of heat-treated aluminum-copper metallization either containing or contacting silicon is reported. Effects are attributed to eutectic formation in the aluminum-copper-silicon system. Processing temperatures less than 525°C are recommended for aluminum metallization containing copper.
ISSN:0018-9219
DOI:10.1109/PROC.1973.9071