Low-noise operation of CW GaAs avalanche diode oscillators

Low-noise operation of CW GaAs avalanche diode oscillators

Previous pulsed low-noise measurements of avalanche oscillators have now been extended to CW devices having GaAs vapor-grown p-n junctions. The best AM noise-to-signal ratio observed was -140 dB, which is about 15 dB better than previously measured for GaAs avalanche diode oscillators.

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Bibliographische Detailangaben
Veröffentlicht in:Proceedings of the IEEE 1971-01, Vol.59 (7), p.1128-1130
Hauptverfasser: Levine, P.A., Dreeben, A.B., Triano, A.R.
Format: Artikel
Sprache:eng
Schlagworte:
Circuit testing
Diodes
Gallium arsenide
Integrated circuit yield
Oscillators
Pulse transformers
Pulsed power supplies
Quantum mechanics
Silicon
Wave functions
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Beschreibung
Zusammenfassung:Previous pulsed low-noise measurements of avalanche oscillators have now been extended to CW devices having GaAs vapor-grown p-n junctions. The best AM noise-to-signal ratio observed was -140 dB, which is about 15 dB better than previously measured for GaAs avalanche diode oscillators.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1971.8350