SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain

Insulated-gate field-effect transistors using Schottky barrier contacts for the source and drain have been studied. At room temperature, the device characteristics are Comparable to conventional IGFET's with similar electrode geometry. At lower temperatures, the current transport is by tunnelin...

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Veröffentlicht in:	Proceedings of the IEEE 1968-01, Vol.56 (8), p.1400-1402
Hauptverfasser:	Lepselter, M.P., Sze, S.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Equations FETs Geometry Insulation Schottky barriers Semiconductor device noise Substrates Symmetric matrices Temperature Voltage
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creator	Lepselter, M.P. Sze, S.M.
description	Insulated-gate field-effect transistors using Schottky barrier contacts for the source and drain have been studied. At room temperature, the device characteristics are Comparable to conventional IGFET's with similar electrode geometry. At lower temperatures, the current transport is by tunneling of carriers from the metal across the Schottky barrier to the semiconductor inversion layer.
doi_str_mv	10.1109/PROC.1968.6618
format	Article
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At room temperature, the device characteristics are Comparable to conventional IGFET's with similar electrode geometry. At lower temperatures, the current transport is by tunneling of carriers from the metal across the Schottky barrier to the semiconductor inversion layer.</description><identifier>ISSN: 0018-9219</identifier><identifier>EISSN: 1558-2256</identifier><identifier>DOI: 10.1109/PROC.1968.6618</identifier><identifier>CODEN: IEEPAD</identifier><language>eng</language><publisher>IEEE</publisher><subject>Equations ; FETs ; Geometry ; Insulation ; Schottky barriers ; Semiconductor device noise ; Substrates ; Symmetric matrices ; Temperature ; Voltage</subject><ispartof>Proceedings of the IEEE, 1968-01, Vol.56 (8), p.1400-1402</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-56d39a6efda38531b34083c7d786e01f26ea19197073cc9773a9b4a209f442203</citedby><cites>FETCH-LOGICAL-c325t-56d39a6efda38531b34083c7d786e01f26ea19197073cc9773a9b4a209f442203</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1448548$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1448548$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lepselter, M.P.</creatorcontrib><creatorcontrib>Sze, S.M.</creatorcontrib><title>SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><description>Insulated-gate field-effect transistors using Schottky barrier contacts for the source and drain have been studied. At room temperature, the device characteristics are Comparable to conventional IGFET's with similar electrode geometry. At lower temperatures, the current transport is by tunneling of carriers from the metal across the Schottky barrier to the semiconductor inversion layer.</description><subject>Equations</subject><subject>FETs</subject><subject>Geometry</subject><subject>Insulation</subject><subject>Schottky barriers</subject><subject>Semiconductor device noise</subject><subject>Substrates</subject><subject>Symmetric matrices</subject><subject>Temperature</subject><subject>Voltage</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1968</creationdate><recordtype>article</recordtype><recordid>eNpFkMtKAzEARYMoWKtbN27yAxnznsRdLVoLhYrV9ZDJo43WGUnSRf_eGSq4uXdzH3AAuCW4IgTr-9e39bwiWqpKSqLOwIQIoRClQp6DCcZEIU2JvgRXOX9ijJmQbAJ2m0e0XDw_vT_AWQdjlw97U7xD20FhiH7vkA_B2wJLMl2OufQJHnLstnBjd30pX0fYmpSiT9D2XTG2ZBiGTO4PyXpoOgddMrG7BhfB7LO_-fMp-Bhe5y9otV4s57MVsoyKgoR0TBvpgzNMCUZaxrFitna1kh6TQKU3RBNd45pZq-uaGd1yQ7EOnFOK2RRUp12b-pyTD81Pit8mHRuCm5FTM3JqRk7NyGko3J0K0Xv_H-ZcCa7YL-XdY_0</recordid><startdate>19680101</startdate><enddate>19680101</enddate><creator>Lepselter, M.P.</creator><creator>Sze, S.M.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19680101</creationdate><title>SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain</title><author>Lepselter, M.P. ; Sze, S.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-56d39a6efda38531b34083c7d786e01f26ea19197073cc9773a9b4a209f442203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1968</creationdate><topic>Equations</topic><topic>FETs</topic><topic>Geometry</topic><topic>Insulation</topic><topic>Schottky barriers</topic><topic>Semiconductor device noise</topic><topic>Substrates</topic><topic>Symmetric matrices</topic><topic>Temperature</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lepselter, M.P.</creatorcontrib><creatorcontrib>Sze, S.M.</creatorcontrib><collection>CrossRef</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lepselter, M.P.</au><au>Sze, S.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>1968-01-01</date><risdate>1968</risdate><volume>56</volume><issue>8</issue><spage>1400</spage><epage>1402</epage><pages>1400-1402</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><abstract>Insulated-gate field-effect transistors using Schottky barrier contacts for the source and drain have been studied. At room temperature, the device characteristics are Comparable to conventional IGFET's with similar electrode geometry. At lower temperatures, the current transport is by tunneling of carriers from the metal across the Schottky barrier to the semiconductor inversion layer.</abstract><pub>IEEE</pub><doi>10.1109/PROC.1968.6618</doi><tpages>3</tpages></addata></record>
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source	IEEE Electronic Library (IEL)
subjects	Equations FETs Geometry Insulation Schottky barriers Semiconductor device noise Substrates Symmetric matrices Temperature Voltage
title	SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain
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