SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain

Insulated-gate field-effect transistors using Schottky barrier contacts for the source and drain have been studied. At room temperature, the device characteristics are Comparable to conventional IGFET's with similar electrode geometry. At lower temperatures, the current transport is by tunneling of carriers from the metal across the Schottky barrier to the semiconductor inversion layer.