Spatial distribution of excess carriers in electron-beam excited semiconductors

Spatial distribution of excess carriers in electron-beam excited semiconductors

The steady-state one-dimensional carrier distribution in depth is computed for electron-beam excitation of semiconductors, including diffusion and surface recombination. An exmple is given for n-type GaAs bombarded by a 29-kV electron beam.

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Bibliographische Detailangaben
Veröffentlicht in:Proc. IEEE (Inst. Elec. Electron. Eng.), 55: 733-4 (May 1967) 55: 733-4 (May 1967), 1967-01, Vol.55 (5), p.733-734
Hauptverfasser: Kyser, D.F., Wittry, D.B.
Format: Artikel
Sprache:eng
Schlagworte:
Charge carrier density
Charge carrier processes
Electron beams
ELECTRONS
Equations
EXCITATION
Gallium arsenide
GALLIUM ARSENIDES
KEV RANGE
Laser excitation
N33100 -Physics (Solid State)
RADIATION EFFECTS
Radiative recombination
SEMICONDUCTORS
Spontaneous emission
Steady-state
Voltage
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Beschreibung
Zusammenfassung:The steady-state one-dimensional carrier distribution in depth is computed for electron-beam excitation of semiconductors, including diffusion and surface recombination. An exmple is given for n-type GaAs bombarded by a 29-kV electron beam.
ISSN:0018-9219
DOI:10.1109/PROC.1967.5675