A 1-GS/s 8-Bit 12.01-fJ/conv.-step Two-Step SAR ADC in 28-nm FDSOI Technology
This letter presents a partially interleaved 1-GS/s 8-bit two-step SAR ADC for low-power operations. A fast noise-reduction technique is proposed to increase the power efficiency without significant degradation of the conversion rate. A modified StrongARM latch is adopted to further reduce the compa...
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Veröffentlicht in: | IEEE solid-state circuits letters 2019-09, Vol.2 (9), p.99-102 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This letter presents a partially interleaved 1-GS/s 8-bit two-step SAR ADC for low-power operations. A fast noise-reduction technique is proposed to increase the power efficiency without significant degradation of the conversion rate. A modified StrongARM latch is adopted to further reduce the comparator noise. A calibration procedure runs in the background to address the nonuniform comparator offsets and the interstage gain error. Fabricated in a 28-nm FDSOI process, the prototype ADC achieves an SNDR of 46.65 dB at Nyquist with a power consumption of 2.1 mW, leading into a Walden FOM of 12.01 fJ/conv.-step. |
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ISSN: | 2573-9603 2573-9603 |
DOI: | 10.1109/LSSC.2019.2934351 |