Data Communication Using Blue GaN-on-Si Micro-LEDs Reported on a 200-mm Silicon Substrate
In this letter, Gallium Nitride (GaN) blue micro-Light-Emitting-Diodes ( \mu LEDs) reported on a 200-mm Silicon substrate are utilized for multi-Gb/s data transmission. The manufacturing process is compatible with CMOS integrated circuit design, paving the way for fully integrated transmitters for...
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| Veröffentlicht in: | IEEE photonics technology letters 2024-09, Vol.36 (18), p.1149-1152 |
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| container_title | IEEE photonics technology letters |
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| creator | El Badaoui, Sultan Maret, Luc Delaunay, Nicolas Cibie, Anthony Le Maitre, Patrick Ballot, Clement Simon, Julia Miralles, Bastien Aventurier, Bernard De Martino, Paolo Jacob, Stephanie Le Guennec, Yannis |
| description | In this letter, Gallium Nitride (GaN) blue micro-Light-Emitting-Diodes ( \mu LEDs) reported on a 200-mm Silicon substrate are utilized for multi-Gb/s data transmission. The manufacturing process is compatible with CMOS integrated circuit design, paving the way for fully integrated transmitters for \mu LED-based visible light communications (VLC) or chip-to-chip interconnects. Fiber-guided transmission has been realized using direct current optical-orthogonal frequency division multiplexing (DCO-OFDM) modulation, and a data rate of 5.9 Gb/s at a Bit-Error-Rate (BER) of 3.8\times 10 ^{-3} is reported using a single 50 \times 50~\mu m2 blue \mu LED. This data rate was further improved to reach 15.5 Gb/s in the case where the \mu LED is only limited by its non-linear distortions instead of the system's noise, highlighting the high linearity of GaN \mu LEDs. |
| doi_str_mv | 10.1109/LPT.2024.3451244 |
| format | Article |
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The manufacturing process is compatible with CMOS integrated circuit design, paving the way for fully integrated transmitters for <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LED-based visible light communications (VLC) or chip-to-chip interconnects. Fiber-guided transmission has been realized using direct current optical-orthogonal frequency division multiplexing (DCO-OFDM) modulation, and a data rate of 5.9 Gb/s at a Bit-Error-Rate (BER) of <inline-formula> <tex-math notation="LaTeX">3.8\times 10 ^{-3} </tex-math></inline-formula> is reported using a single <inline-formula> <tex-math notation="LaTeX">50 \times 50~\mu </tex-math></inline-formula> m2 blue <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LED. This data rate was further improved to reach 15.5 Gb/s in the case where the <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LED is only limited by its non-linear distortions instead of the system's noise, highlighting the high linearity of GaN <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LEDs.]]></description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2024.3451244</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidth ; Chip-to-chip communication ; Circuit design ; Data communication ; Data transmission ; DCO-OFDM ; Direct current ; Engineering Sciences ; Gallium nitrides ; GaN micro-LED ; Integrated circuits ; Light emitting diodes ; Linearity ; Modulation ; OFDM ; optical communication ; Optical modulation ; Optical receivers ; Optics ; Orthogonal Frequency Division Multiplexing ; Photonic ; Signal and Image processing ; Silicon ; Silicon substrates ; Transmitters</subject><ispartof>IEEE photonics technology letters, 2024-09, Vol.36 (18), p.1149-1152</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c209t-dda29415110e795465c6ca4c0d895fe6ac807af3e1206020d012a1cfa915bc9a3</cites><orcidid>0009-0006-5466-2474 ; 0000-0002-0632-9662 ; 0009-0007-3191-2546 ; 0009-0007-4166-817X ; 0009-0007-4227-0470 ; 0000-0002-4813-4353 ; 0009-0000-1972-3987</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10654359$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10654359$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://hal.univ-grenoble-alpes.fr/hal-04681830$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>El Badaoui, Sultan</creatorcontrib><creatorcontrib>Maret, Luc</creatorcontrib><creatorcontrib>Delaunay, Nicolas</creatorcontrib><creatorcontrib>Cibie, Anthony</creatorcontrib><creatorcontrib>Le Maitre, Patrick</creatorcontrib><creatorcontrib>Ballot, Clement</creatorcontrib><creatorcontrib>Simon, Julia</creatorcontrib><creatorcontrib>Miralles, Bastien</creatorcontrib><creatorcontrib>Aventurier, Bernard</creatorcontrib><creatorcontrib>De Martino, Paolo</creatorcontrib><creatorcontrib>Jacob, Stephanie</creatorcontrib><creatorcontrib>Le Guennec, Yannis</creatorcontrib><title>Data Communication Using Blue GaN-on-Si Micro-LEDs Reported on a 200-mm Silicon Substrate</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description><![CDATA[In this letter, Gallium Nitride (GaN) blue micro-Light-Emitting-Diodes (<inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LEDs) reported on a 200-mm Silicon substrate are utilized for multi-Gb/s data transmission. The manufacturing process is compatible with CMOS integrated circuit design, paving the way for fully integrated transmitters for <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LED-based visible light communications (VLC) or chip-to-chip interconnects. Fiber-guided transmission has been realized using direct current optical-orthogonal frequency division multiplexing (DCO-OFDM) modulation, and a data rate of 5.9 Gb/s at a Bit-Error-Rate (BER) of <inline-formula> <tex-math notation="LaTeX">3.8\times 10 ^{-3} </tex-math></inline-formula> is reported using a single <inline-formula> <tex-math notation="LaTeX">50 \times 50~\mu </tex-math></inline-formula> m2 blue <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LED. This data rate was further improved to reach 15.5 Gb/s in the case where the <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LED is only limited by its non-linear distortions instead of the system's noise, highlighting the high linearity of GaN <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LEDs.]]></description><subject>Bandwidth</subject><subject>Chip-to-chip communication</subject><subject>Circuit design</subject><subject>Data communication</subject><subject>Data transmission</subject><subject>DCO-OFDM</subject><subject>Direct current</subject><subject>Engineering Sciences</subject><subject>Gallium nitrides</subject><subject>GaN micro-LED</subject><subject>Integrated circuits</subject><subject>Light emitting diodes</subject><subject>Linearity</subject><subject>Modulation</subject><subject>OFDM</subject><subject>optical communication</subject><subject>Optical modulation</subject><subject>Optical receivers</subject><subject>Optics</subject><subject>Orthogonal Frequency Division Multiplexing</subject><subject>Photonic</subject><subject>Signal and Image processing</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Transmitters</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkM1Lw0AQxYMoqNW7Bw8LnjykzuxHmhxrWz8gfmDbg6dl3Gx0S5PUbCL437ulIp7mMfzeMO9F0RnCEBGyq_x5MeTA5VBIhVzKvegIM4kx4EjuBw1BIwp1GB17vwJAqYQ8il6n1BGbNFXV185Q55qaLb2r39n1urfslh7jpo7njj040zZxPpt69mI3TdvZggWWGAeIq4rN3dqZsJj3b75rqbMn0UFJa29Pf-cgWt7MFpO7OH-6vZ-M89hwyLq4KIiHP1UIYUeZkokyiSFpoEgzVdqETAojKoVFDglwKAA5oSkpQ_VmMhKD6HJ394PWetO6itpv3ZDTd-Ncb3cgkxRTAV8Y2Isdu2mbz976Tq-avq3De1ogoJBpIiFQsKNCYu9bW_6dRdDbsnUoW2_L1r9lB8v5zuKstf_wREmhMvEDEfp3Tw</recordid><startdate>20240915</startdate><enddate>20240915</enddate><creator>El Badaoui, Sultan</creator><creator>Maret, Luc</creator><creator>Delaunay, Nicolas</creator><creator>Cibie, Anthony</creator><creator>Le Maitre, Patrick</creator><creator>Ballot, Clement</creator><creator>Simon, Julia</creator><creator>Miralles, Bastien</creator><creator>Aventurier, Bernard</creator><creator>De Martino, Paolo</creator><creator>Jacob, Stephanie</creator><creator>Le Guennec, Yannis</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The manufacturing process is compatible with CMOS integrated circuit design, paving the way for fully integrated transmitters for <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LED-based visible light communications (VLC) or chip-to-chip interconnects. Fiber-guided transmission has been realized using direct current optical-orthogonal frequency division multiplexing (DCO-OFDM) modulation, and a data rate of 5.9 Gb/s at a Bit-Error-Rate (BER) of <inline-formula> <tex-math notation="LaTeX">3.8\times 10 ^{-3} </tex-math></inline-formula> is reported using a single <inline-formula> <tex-math notation="LaTeX">50 \times 50~\mu </tex-math></inline-formula> m2 blue <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LED. This data rate was further improved to reach 15.5 Gb/s in the case where the <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LED is only limited by its non-linear distortions instead of the system's noise, highlighting the high linearity of GaN <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>LEDs.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2024.3451244</doi><tpages>4</tpages><orcidid>https://orcid.org/0009-0006-5466-2474</orcidid><orcidid>https://orcid.org/0000-0002-0632-9662</orcidid><orcidid>https://orcid.org/0009-0007-3191-2546</orcidid><orcidid>https://orcid.org/0009-0007-4166-817X</orcidid><orcidid>https://orcid.org/0009-0007-4227-0470</orcidid><orcidid>https://orcid.org/0000-0002-4813-4353</orcidid><orcidid>https://orcid.org/0009-0000-1972-3987</orcidid></addata></record> |
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| subjects | Bandwidth Chip-to-chip communication Circuit design Data communication Data transmission DCO-OFDM Direct current Engineering Sciences Gallium nitrides GaN micro-LED Integrated circuits Light emitting diodes Linearity Modulation OFDM optical communication Optical modulation Optical receivers Optics Orthogonal Frequency Division Multiplexing Photonic Signal and Image processing Silicon Silicon substrates Transmitters |
| title | Data Communication Using Blue GaN-on-Si Micro-LEDs Reported on a 200-mm Silicon Substrate |
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