Data Communication Using Blue GaN-on-Si Micro-LEDs Reported on a 200-mm Silicon Substrate

In this letter, Gallium Nitride (GaN) blue micro-Light-Emitting-Diodes ( \mu LEDs) reported on a 200-mm Silicon substrate are utilized for multi-Gb/s data transmission. The manufacturing process is compatible with CMOS integrated circuit design, paving the way for fully integrated transmitters for...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 2024-09, Vol.36 (18), p.1149-1152
Hauptverfasser: El Badaoui, Sultan, Maret, Luc, Delaunay, Nicolas, Cibie, Anthony, Le Maitre, Patrick, Ballot, Clement, Simon, Julia, Miralles, Bastien, Aventurier, Bernard, De Martino, Paolo, Jacob, Stephanie, Le Guennec, Yannis
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this letter, Gallium Nitride (GaN) blue micro-Light-Emitting-Diodes ( \mu LEDs) reported on a 200-mm Silicon substrate are utilized for multi-Gb/s data transmission. The manufacturing process is compatible with CMOS integrated circuit design, paving the way for fully integrated transmitters for \mu LED-based visible light communications (VLC) or chip-to-chip interconnects. Fiber-guided transmission has been realized using direct current optical-orthogonal frequency division multiplexing (DCO-OFDM) modulation, and a data rate of 5.9 Gb/s at a Bit-Error-Rate (BER) of 3.8\times 10 ^{-3} is reported using a single 50 \times 50~\mu m2 blue \mu LED. This data rate was further improved to reach 15.5 Gb/s in the case where the \mu LED is only limited by its non-linear distortions instead of the system's noise, highlighting the high linearity of GaN \mu LEDs.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2024.3451244