High-Performance Thin-Film Lithium Niobate Mach-Zehnder Modulator on 8-inch Silicon Substrates
Lithium niobate modulators have primarily been fabricated on chip-level or 4/6-inch wafers. Here, thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulators (MZM) are demonstrated for the first time on an 8-inch silicon substrate. The fabricated LN modulator has an on-chip loss of less t...
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| Veröffentlicht in: | IEEE photonics technology letters 2024-09, Vol.36 (17), p.1077-1080 |
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| container_title | IEEE photonics technology letters |
| container_volume | 36 |
| creator | Zhou, Jingjie Lv, Liming Yao, Zhanshi Zhu, Shiyang Wang, Yuxi Cong, Qingyu Li, Zhaoyi Fan, Zuowen Zeng, Xianfeng Hu, Ting Jia, Lianxi |
| description | Lithium niobate modulators have primarily been fabricated on chip-level or 4/6-inch wafers. Here, thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulators (MZM) are demonstrated for the first time on an 8-inch silicon substrate. The fabricated LN modulator has an on-chip loss of less than 1 dB with a waveguide loss of lower than 0.5 dB/cm. The half-wave voltage- length product (V \pi \cdot L) is 3.12 V \cdot cm in the C-band at a 0.5 cm modulation length, and the corresponding 3-dB bandwidth of the electro-optic response is beyond 67 GHz. All specifications are state-of-the-art. These results provide the basis for the industrialization of the TFLN platform with better balance between performance and cost. |
| doi_str_mv | 10.1109/LPT.2024.3434542 |
| format | Article |
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Here, thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulators (MZM) are demonstrated for the first time on an 8-inch silicon substrate. The fabricated LN modulator has an on-chip loss of less than 1 dB with a waveguide loss of lower than 0.5 dB/cm. The half-wave voltage- length product (V<inline-formula> <tex-math notation="LaTeX">\pi \cdot </tex-math></inline-formula> L) is 3.12 V<inline-formula> <tex-math notation="LaTeX">\cdot </tex-math></inline-formula> cm in the C-band at a 0.5 cm modulation length, and the corresponding 3-dB bandwidth of the electro-optic response is beyond 67 GHz. All specifications are state-of-the-art. These results provide the basis for the industrialization of the TFLN platform with better balance between performance and cost.]]></description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2024.3434542</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>C band ; Electro-optic modulators ; Electro-optical modulators ; Electrodes ; lithium niobate ; Lithium niobates ; Loss measurement ; Mach-Zehnder interferometers ; Modulation ; Modulators ; optical device fabrication ; Optical losses ; Optical waveguides ; Propagation losses ; Silicon substrates ; Thin films ; Waveguides</subject><ispartof>IEEE photonics technology letters, 2024-09, Vol.36 (17), p.1077-1080</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c175t-ac0ed08741d6ab79a91e70c2faea654a93b06427777a9539ec78ac2803c5373d3</cites><orcidid>0000-0001-5605-9149 ; 0009-0008-4044-9650 ; 0000-0002-7134-1748 ; 0009-0004-0165-1339</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10613783$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10613783$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhou, Jingjie</creatorcontrib><creatorcontrib>Lv, Liming</creatorcontrib><creatorcontrib>Yao, Zhanshi</creatorcontrib><creatorcontrib>Zhu, Shiyang</creatorcontrib><creatorcontrib>Wang, Yuxi</creatorcontrib><creatorcontrib>Cong, Qingyu</creatorcontrib><creatorcontrib>Li, Zhaoyi</creatorcontrib><creatorcontrib>Fan, Zuowen</creatorcontrib><creatorcontrib>Zeng, Xianfeng</creatorcontrib><creatorcontrib>Hu, Ting</creatorcontrib><creatorcontrib>Jia, Lianxi</creatorcontrib><title>High-Performance Thin-Film Lithium Niobate Mach-Zehnder Modulator on 8-inch Silicon Substrates</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description><![CDATA[Lithium niobate modulators have primarily been fabricated on chip-level or 4/6-inch wafers. Here, thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulators (MZM) are demonstrated for the first time on an 8-inch silicon substrate. The fabricated LN modulator has an on-chip loss of less than 1 dB with a waveguide loss of lower than 0.5 dB/cm. The half-wave voltage- length product (V<inline-formula> <tex-math notation="LaTeX">\pi \cdot </tex-math></inline-formula> L) is 3.12 V<inline-formula> <tex-math notation="LaTeX">\cdot </tex-math></inline-formula> cm in the C-band at a 0.5 cm modulation length, and the corresponding 3-dB bandwidth of the electro-optic response is beyond 67 GHz. All specifications are state-of-the-art. These results provide the basis for the industrialization of the TFLN platform with better balance between performance and cost.]]></description><subject>C band</subject><subject>Electro-optic modulators</subject><subject>Electro-optical modulators</subject><subject>Electrodes</subject><subject>lithium niobate</subject><subject>Lithium niobates</subject><subject>Loss measurement</subject><subject>Mach-Zehnder interferometers</subject><subject>Modulation</subject><subject>Modulators</subject><subject>optical device fabrication</subject><subject>Optical losses</subject><subject>Optical waveguides</subject><subject>Propagation losses</subject><subject>Silicon substrates</subject><subject>Thin films</subject><subject>Waveguides</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkL1PwzAQxSMEEqWwMzBYYnbxZxyPqKIUqYVKLQsDluM4xFUSFzsZ-O8xagduuXfSe_ekX5bdYjTDGMmH1WY3I4iwGWWUcUbOsgmWDEOEBTtPGiWNMeWX2VWMe4Qw45RNss-l-2rgxobah073xoJd43q4cG0HVm5o3NiBV-dLPViw1qaBH7bpKxvA2ldjqwcfgO9BAV1vGrB1rTPp3I5lHEKKxOvsotZttDenPc3eF0-7-RKu3p5f5o8raLDgA9QG2QoVguEq16WQWmIrkCG1tjrnTEtaopwRkUZLTqU1otCGFIgaTgWt6DS7P_49BP892jiovR9DnyoVRYWUhPKcJBc6ukzwMQZbq0NwnQ4_CiP1R1EliuqPojpRTJG7Y8RZa__Zc0xFQekvsaNtNw</recordid><startdate>20240901</startdate><enddate>20240901</enddate><creator>Zhou, Jingjie</creator><creator>Lv, Liming</creator><creator>Yao, Zhanshi</creator><creator>Zhu, Shiyang</creator><creator>Wang, Yuxi</creator><creator>Cong, Qingyu</creator><creator>Li, Zhaoyi</creator><creator>Fan, Zuowen</creator><creator>Zeng, Xianfeng</creator><creator>Hu, Ting</creator><creator>Jia, Lianxi</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5605-9149</orcidid><orcidid>https://orcid.org/0009-0008-4044-9650</orcidid><orcidid>https://orcid.org/0000-0002-7134-1748</orcidid><orcidid>https://orcid.org/0009-0004-0165-1339</orcidid></search><sort><creationdate>20240901</creationdate><title>High-Performance Thin-Film Lithium Niobate Mach-Zehnder Modulator on 8-inch Silicon Substrates</title><author>Zhou, Jingjie ; Lv, Liming ; Yao, Zhanshi ; Zhu, Shiyang ; Wang, Yuxi ; Cong, Qingyu ; Li, Zhaoyi ; Fan, Zuowen ; Zeng, Xianfeng ; Hu, Ting ; Jia, Lianxi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c175t-ac0ed08741d6ab79a91e70c2faea654a93b06427777a9539ec78ac2803c5373d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>C band</topic><topic>Electro-optic modulators</topic><topic>Electro-optical modulators</topic><topic>Electrodes</topic><topic>lithium niobate</topic><topic>Lithium niobates</topic><topic>Loss measurement</topic><topic>Mach-Zehnder interferometers</topic><topic>Modulation</topic><topic>Modulators</topic><topic>optical device fabrication</topic><topic>Optical losses</topic><topic>Optical waveguides</topic><topic>Propagation losses</topic><topic>Silicon substrates</topic><topic>Thin films</topic><topic>Waveguides</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Jingjie</creatorcontrib><creatorcontrib>Lv, Liming</creatorcontrib><creatorcontrib>Yao, Zhanshi</creatorcontrib><creatorcontrib>Zhu, Shiyang</creatorcontrib><creatorcontrib>Wang, Yuxi</creatorcontrib><creatorcontrib>Cong, Qingyu</creatorcontrib><creatorcontrib>Li, Zhaoyi</creatorcontrib><creatorcontrib>Fan, Zuowen</creatorcontrib><creatorcontrib>Zeng, Xianfeng</creatorcontrib><creatorcontrib>Hu, Ting</creatorcontrib><creatorcontrib>Jia, Lianxi</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhou, Jingjie</au><au>Lv, Liming</au><au>Yao, Zhanshi</au><au>Zhu, Shiyang</au><au>Wang, Yuxi</au><au>Cong, Qingyu</au><au>Li, Zhaoyi</au><au>Fan, Zuowen</au><au>Zeng, Xianfeng</au><au>Hu, Ting</au><au>Jia, Lianxi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance Thin-Film Lithium Niobate Mach-Zehnder Modulator on 8-inch Silicon Substrates</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2024-09-01</date><risdate>2024</risdate><volume>36</volume><issue>17</issue><spage>1077</spage><epage>1080</epage><pages>1077-1080</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract><![CDATA[Lithium niobate modulators have primarily been fabricated on chip-level or 4/6-inch wafers. Here, thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulators (MZM) are demonstrated for the first time on an 8-inch silicon substrate. The fabricated LN modulator has an on-chip loss of less than 1 dB with a waveguide loss of lower than 0.5 dB/cm. The half-wave voltage- length product (V<inline-formula> <tex-math notation="LaTeX">\pi \cdot </tex-math></inline-formula> L) is 3.12 V<inline-formula> <tex-math notation="LaTeX">\cdot </tex-math></inline-formula> cm in the C-band at a 0.5 cm modulation length, and the corresponding 3-dB bandwidth of the electro-optic response is beyond 67 GHz. All specifications are state-of-the-art. 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| subjects | C band Electro-optic modulators Electro-optical modulators Electrodes lithium niobate Lithium niobates Loss measurement Mach-Zehnder interferometers Modulation Modulators optical device fabrication Optical losses Optical waveguides Propagation losses Silicon substrates Thin films Waveguides |
| title | High-Performance Thin-Film Lithium Niobate Mach-Zehnder Modulator on 8-inch Silicon Substrates |
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