Monolithic InP Quantum Dot Mode-Locked Lasers Emitting at 730 nm

This letter reports on InP/GaInP quantum dot modelocked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is...

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Veröffentlicht in:	IEEE photonics technology letters 2020-09, Vol.32 (17), p.1-1
Hauptverfasser:	Li, Zhibo, Allford, Craig P., Shutts, Samuel, Forrest, Adam F., Alharbi, Reem, Krysa, Andrey B., Cataluna, Maria Ana, Smowton, Peter M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Current measurement InP quantum dots Laser mode locking Lasers mode-locked laser diode monolithic integration Optical device fabrication Optical imaging Optical pulses Quantum dot lasers Quantum dots Spectral emittance
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Zusammenfassung:	This letter reports on InP/GaInP quantum dot modelocked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2020.3012568