Investigation of InGaN p-i-n Homojunction and Heterojunction Solar Cells

Investigation of InGaN p-i-n Homojunction and Heterojunction Solar Cells

InGaN p-i-n homojunction (HOJ) and heterojunction (HEJ) solar cells (SCs) with similar width of depletion region are investigated. Through comparison of both the material property and device performance, it is demonstrated that HEJ exhibits much better results than HOJ, indicating that HEJ is prefer...

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Veröffentlicht in:IEEE photonics technology letters 2013-01, Vol.25 (1), p.59-62
Hauptverfasser: Cai, Xiaomei, Wang, Yu, Chen, Bihua, Liang, Ming-Ming, Liu, Wen-Jie, Zhang, Jiang-Yong, Lv, Xue-Qin, Ying, Lei-Ying, Zhang, Bao-Ping
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Sprache:eng
Schlagworte:
Absorption
Doping
Gallium nitride
Heterojunction (HEJ)
homojunction (HOJ)
InGaN
Materials
p-i-n
Photovoltaic cells
PIN photodiodes
solar cells (SCs)
Surface morphology
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container_end_page 62
container_issue 1
container_start_page 59
container_title IEEE photonics technology letters
container_volume 25
creator Cai, Xiaomei
Wang, Yu
Chen, Bihua
Liang, Ming-Ming
Liu, Wen-Jie
Zhang, Jiang-Yong
Lv, Xue-Qin
Ying, Lei-Ying
Zhang, Bao-Ping
description InGaN p-i-n homojunction (HOJ) and heterojunction (HEJ) solar cells (SCs) with similar width of depletion region are investigated. Through comparison of both the material property and device performance, it is demonstrated that HEJ exhibits much better results than HOJ, indicating that HEJ is preferred for fabrication of InGaN SCs. Some suggestions are proposed for the development of InGaN SCs in the future.
doi_str_mv 10.1109/LPT.2012.2227702
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subjects Absorption
Doping
Gallium nitride
Heterojunction (HEJ)
homojunction (HOJ)
InGaN
Materials
p-i-n
Photovoltaic cells
PIN photodiodes
solar cells (SCs)
Surface morphology
title Investigation of InGaN p-i-n Homojunction and Heterojunction Solar Cells
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