Investigation of InGaN p-i-n Homojunction and Heterojunction Solar Cells

Investigation of InGaN p-i-n Homojunction and Heterojunction Solar Cells

InGaN p-i-n homojunction (HOJ) and heterojunction (HEJ) solar cells (SCs) with similar width of depletion region are investigated. Through comparison of both the material property and device performance, it is demonstrated that HEJ exhibits much better results than HOJ, indicating that HEJ is prefer...

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Veröffentlicht in:IEEE photonics technology letters 2013-01, Vol.25 (1), p.59-62
Hauptverfasser: Cai, Xiaomei, Wang, Yu, Chen, Bihua, Liang, Ming-Ming, Liu, Wen-Jie, Zhang, Jiang-Yong, Lv, Xue-Qin, Ying, Lei-Ying, Zhang, Bao-Ping
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Doping
Gallium nitride
Heterojunction (HEJ)
homojunction (HOJ)
InGaN
Materials
p-i-n
Photovoltaic cells
PIN photodiodes
solar cells (SCs)
Surface morphology
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Zusammenfassung:InGaN p-i-n homojunction (HOJ) and heterojunction (HEJ) solar cells (SCs) with similar width of depletion region are investigated. Through comparison of both the material property and device performance, it is demonstrated that HEJ exhibits much better results than HOJ, indicating that HEJ is preferred for fabrication of InGaN SCs. Some suggestions are proposed for the development of InGaN SCs in the future.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2227702