Research on Electrical Efficiency Degradation Influenced by Current Crowding in Vertical Blue InGaN-on-SiC Light-Emitting Diodes

Research on Electrical Efficiency Degradation Influenced by Current Crowding in Vertical Blue InGaN-on-SiC Light-Emitting Diodes

Current-induced electrical efficiency degradation (EED) is identified as a strong power conversion efficiency-limiting factor for vertical blue InGaN-on-SiC light-emitting diodes (LEDs). It is found that EED is caused by an increase in series resistance that follows current crowding. EED starts at t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 2012-07, Vol.24 (13), p.1124-1126
Hauptverfasser: Malyutenko, V. K., Bolgov, S. S., Tykhonov, A. N.
Format: Artikel
Sprache:eng
Schlagworte:
Current crowding
Degradation
InGaN-on-SiC structures
Junctions
light emitting devices
Light emitting diodes
Optical losses
power conversion efficiency
Proximity effects
Resistance
Stimulated emission
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Current-induced electrical efficiency degradation (EED) is identified as a strong power conversion efficiency-limiting factor for vertical blue InGaN-on-SiC light-emitting diodes (LEDs). It is found that EED is caused by an increase in series resistance that follows current crowding. EED starts at the moderate-current domain ( ≥ 10 -3 A) and limits the power conversion efficiency at the level of ≤ 75% in the high-current domain (>;1.0 A). By decreasing current spreading length, EED also causes the optical efficiency to degrade and stands for an important aspect of the vertical LED's performance.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2196426