High-Speed Low-Noise InAs/InAlGaAs/InP 1.55- \mu Quantum-Dot Lasers

High-Speed Low-Noise InAs/InAlGaAs/InP 1.55- \mu Quantum-Dot Lasers

We present the static and dynamic properties of InAs quantum-dot (QD) lasers emitting near 1.55 μm. The used laser material comprises four QD layers and exhibits a high modal gain of about 40 cm -1 . The 340-μ.m-long lasers show a room temperature threshold current of 38 mA and a maximum output powe...

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Veröffentlicht in:IEEE photonics technology letters 2012-05, Vol.24 (10), p.809-811
Hauptverfasser: Gready, D., Eisenstein, G., Gilfert, C., Ivanov, V., Reithmaier, J. P.
Format: Artikel
Sprache:eng
Schlagworte:
Gain
Laser modes
Laser noise
Laser theory
Modulation
Optoelectronic devices
Quantum dot lasers
quantum dots
semiconductor lasers
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Zusammenfassung:We present the static and dynamic properties of InAs quantum-dot (QD) lasers emitting near 1.55 μm. The used laser material comprises four QD layers and exhibits a high modal gain of about 40 cm -1 . The 340-μ.m-long lasers show a room temperature threshold current of 38 mA and a maximum output power of 16 mW. The small signal modulation response is highly damped and carrier transport limited with a moderate 3-dB bandwidth of 5 GHz. This is accompanied by a flat relative intensity noise spectrum at a low level of -150 dBc/Hz. Neverthe- less, the laser exhibits record large signal modulation capabilities for a 1.5-μ.m QD laser: 15 Gb/s with a 4-dB on/off ratio.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2188506