High-Power Tunnel-Injection 1060-nm InGaAs-(Al)GaAs Quantum-Dot Lasers

High-power 1060-nm InGaAs-(Al)GaAs quantum-dot (QD) laser material was developed with an integrated InGaAs quantum film acting as a tunnel injector for electrons. In comparison to a QD laser without tunnel-injection design, the new type of lasers exhibit a strongly improved temperature stability of...

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Veröffentlicht in:	IEEE photonics technology letters 2009-07, Vol.21 (14), p.999-1001
Hauptverfasser:	Pavelescu, E.-M., Gilfert, C., Reithmaier, J.P., Martin-Minguez, A., Esquivias, I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Laser stability Optical design Optical materials Power lasers Quantum dot lasers quantum dots (QDs) Semiconductor lasers Semiconductor materials Temperature dependence Temperature sensors Threshold current Tunneling
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Beschreibung
Zusammenfassung:	High-power 1060-nm InGaAs-(Al)GaAs quantum-dot (QD) laser material was developed with an integrated InGaAs quantum film acting as a tunnel injector for electrons. In comparison to a QD laser without tunnel-injection design, the new type of lasers exhibit a strongly improved temperature stability of the threshold current and internal quantum efficiency.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2009.2021074