The Influence of Nonequilibrium Distribution on Room-Temperature Lasing Spectra in Quantum-Dash Lasers

The Influence of Nonequilibrium Distribution on Room-Temperature Lasing Spectra in Quantum-Dash Lasers

We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and las...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 2009-01, Vol.21 (1), p.30-32
Hauptverfasser: Tan, C.L., Djie, H.S., Wang, Y., Dimas, C.E., Hongpinyo, V., Ding, Y.H., Ooi, B.S.
Format: Artikel
Sprache:eng
Schlagworte:
Biomedical optical imaging
Chemical lasers
Electroluminescence
Indium phosphides
Lasers
Lasing
Nonequilibrium distribution
Nonlinear optics
Optical pumping
Optical sensors
Photons
Quantum dot lasers
Quantum dots
Quantum well lasers
quantum-dash (Qdash)
quantum-dot (QD)
Semiconductor lasers
Spectra
Stimulated emission
supercontinuum broadband laser
Temperature distribution
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.2008197