Light-Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication meth...

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Veröffentlicht in:	IEEE photonics technology letters 2007-06, Vol.19 (11), p.849-851
Hauptverfasser:	Chih-Chiang Kao, Kuo, H.C., Yeh, K.F., Chu, J.T., Peng, W.L., Huang, H.W., Lu, T.C., Wang, S.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Dry etching Gallium nitride Gallium nitrides GaN Inductively coupled plasma laser lift-off (LLO) Lasers Light emitting diodes light extraction efficiency light-emitting diode (LED) nano-roughened surface Nanocomposites Nanomaterials Nanostructure Optical device fabrication Plasma applications Plasma devices Plasma properties Rough surfaces Surface emitting lasers Surface roughness
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