Light-Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication meth...

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Veröffentlicht in:IEEE photonics technology letters 2007-06, Vol.19 (11), p.849-851
Hauptverfasser: Chih-Chiang Kao, Kuo, H.C., Yeh, K.F., Chu, J.T., Peng, W.L., Huang, H.W., Lu, T.C., Wang, S.C.
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Sprache:eng
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Zusammenfassung:In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication method to form nano-scaled roughness, the electrical property was almost not degraded. Furthermore, the light-output power and wall-plug efficiency of LLO LED could be both significantly enhanced about two times using this simple method
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2007.897455