Reduced surface sidewall recombination and diffusion in quantum-dot lasers

Reduced surface sidewall recombination and diffusion in quantum-dot lasers

We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 mum) and, for the first time, provide a value for surface recombination velocity (5times10 4 cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, the...

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Veröffentlicht in:IEEE photonics technology letters 2006-09, Vol.18 (17), p.1861-1863
Hauptverfasser: Moore, S.A., O'Faolain, L., Cataluna, M.A., Flynn, M.B., Kotlyar, M.V., Krauss, T.F.
Format: Artikel
Sprache:eng
Schlagworte:
Carrier confinement
Confinement
Current carriers
Diffusion length
Lasers
low threshold
Optical materials
Quantum dot lasers
Quantum dots
Quantum well lasers
Quantum wells
Radiative recombination
Semiconductor lasers
Semiconductor materials
Surface emitting lasers
surface recombination
Threshold current
Threshold currents
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Zusammenfassung:We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 mum) and, for the first time, provide a value for surface recombination velocity (5times10 4 cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5times10 5 cm/s and 5 mum, respectively) allowing the creation of narrow (2-3 mum wide) lasers with comparable threshold currents to those of broad area devices
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.881206