Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes

Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes

We report ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. An external quantum efficiency of 83% (187 mA/W) at 278 nm, corresponding to unity gain after reach-through was achieved. A gain higher than 1000 was demonstrated without edge breakdown.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 2006-01, Vol.18 (1), p.136-138
Hauptverfasser: Xiangyi Guo, Rowland, L.B., Dunne, G.T., Fronheiser, J.A., Sandvik, P.M., Beck, A.L., Campbell, J.C.
Format: Artikel
Sprache:eng
Schlagworte:
Avalanche photodiodes
Avalanche photodiodes (APDs)
Avalanches
Breakdown
Doping
Electric breakdown
Electromagnetic wave absorption
Epitaxial layers
Gain
Impact ionization
Infrared spectra
Mass spectroscopy
Multiplication
Photodiodes
Quantum efficiency
Silicon carbide
silicon carbide (SiC)
Substrates
Ultraviolet
ultraviolet (UV)
Unity
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Beschreibung
Zusammenfassung:We report ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. An external quantum efficiency of 83% (187 mA/W) at 278 nm, corresponding to unity gain after reach-through was achieved. A gain higher than 1000 was demonstrated without edge breakdown.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2005.860384